SAMSUNG 990 EVO PLUS Gen.4 – Gen 5 Brand New 2TB NVME M.2 SSD

General Feature

• Application

  Client PCs

• FORM FACTOR

  M.2 (2280)

• INTERFACE

  PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0

• DIMENSION (WxHxD)

  80.15 x 22.15 x 2.38mm

• WEIGHT

  Max 9.0g Weight

• STORAGE MEMORY

  Samsung V-NAND TLC

• CONTROLLER

  Samsung in-house Controller

• CACHE MEMORY

  HMB(Host Memory Buffer)

Special Feature

• TRIM Support

  Supported

• S.M.A.R.T Support

  Supported

• GC (GARBAGE COLLECTION)

  Auto Garbage Collection Algorithm

• ENCRYPTION SUPPORT

  AES 256-bit Encryption (Class 0) TCG/Opal
  IEEE1667 (Encrypted drive)

• WWN SUPPORT

  Not supported

• DEVICE SLEEP MODE SUPPORT

  Yes

Performance²⁾

• SEQUENTIAL READ

  1TB: Up to 7,150 MB/s
  2TB: Up to 7,250 MB/s
  4TB: Up to 7,250 MB/s

• SEQUENTIAL WRITE

  1TB: Up to 6,300 MB/s
  2TB: Up to 6,300 MB/s
  4TB: Up to 6,300 MB/s

• RANDOM READ (4KB, QD32)

  1TB: Up to 850,000 IOPS
  2TB: Up to 1,000,000 IOPS
  4TB: Up to 1,050,000 IOPS

• RANDOM WRITE (4KB, QD32)

  1TB: Up to 1,350,000 IOPS
  2TB: Up to 1,350,000 IOPS
  4TB: Up to 1,400,000 IOPS

Environment

• AVERAGE POWER CONSUMPTION
  (System Level)³⁾

  1TB: Average: Read 4.3 W / Write 4.2 W
  2TB: Average: Read 4.6 W / Write 4.2 W
  4TB: Average: Read 5.5 W / Write 4.8 W

• POWER CONSUMPTION (IDLE)³⁾

  1TB: Typical 60 mW
  2TB: Typical 60 mW
  4TB: Typical 60 mW

• POWER CONSUMPTION (DEVICE SLEEP)

  1TB: Typical 5mW
  2TB: Typical 5mW
  4TB: Typical 5mW

• ALLOWABLE VOLTAGE

  3.3 V ± 5 % Allowable voltage

• RELIABILITY (MTBF)

  1.5 Million Hours Reliability (MTBF)

• OPERATING TEMPERATURE

  0 – 70 ℃ Operating Temperature

• Shock

  1,500 G & 0.5 ms (Half sine)